000			01757cam a22004337a 4500
001			32351
003			AE-DuAU
005			20241127172608.0
008			081222s2008 si a b 000 0 eng d
010			_a 2008501288
020			_a9812779043 (hbk.)
020			_a9789812779045 (hbk.)
050	0	0	_aTK7874.8 _b.P49 2008
050	1	4	_aQC176.8.N35 _bP487 2008
090			_aQC 176.8 .N35 P487 2008
245	0	0	_aPhysics and modeling of tera-and nano-devices / _ceditors, Maxim Ryzhii, Victor Ryzhii.
260			_aSingapore ; _aHackensack, NJ : _bWorld Scientific, _cc2008
300			_aviii, 184 p. : _bill. ; _c26 cm.
336			_2rdacontent _atext _btxt
337			_2rdamedia _aunmediated _bn
338			_2rdacarrier _avolume _bnc
490	0		_aSelected topics in electronics and systems ; _vv. 47
500			_a"Based on the invited and contributed papers presented by the researchers ... at the International Workshop 'Tera- and Nano-Devices: Physics and Modeling' held on October 16-19, 2006 in Aizu-Wakamatsu, Japan"--P. v.
504			_aIncludes bibliographical references.
650		0	_aNanoscience _vCongresses. _997618
650		0	_aNanotechnology _vCongresses. _915245
650		0	_aNanostructured materials _vCongresses. _984627
650		0	_aTerahertz technology _vCongresses. _9154525
650		0	_aOptoelectronics _vCongresses. _9154526
650		0	_aOptoelectronic devices _vCongresses. _9154527
700	1		_aRyzhii, Maxim. _9154528
700	1		_aRyzhii, Victor. _9154529
852	1		_9P99.00usd
907			_a32351 _b05-10-11 _c04-28-11
942			_cBOOK _00
998			_aaudmc _b05-10-11 _cm _da _e- _feng _gsi _h0
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999			_c32351 _d32351